hydrogen plasma meaning in Chinese
氢等离子体
Examples
- The main process parameters include hydrogen content in the gas sources , hydrogen plasma catalyst pretreatment , substrate bias , deposition temperature and plasma flow guiding
主要之制程参数包括气源中之氢气含量、氢电浆前处理、基材偏压、沉积温度以及电浆导流板之施加。 - Abstract : some plasma sources in plasma microwave devices have been introduced and analyzed in this paper , the design and its driving circuit of a compact hydrogen plasma gun have been discussed in detail
文摘:介绍和分析了几种等离子体微波器件中等离子体源，重点讨论了紧凑型氢等离子体枪的设计及其驱动电路。 - The method of preparing the uniform coating , the techniques of thermal bonding and hydrogen plasma treatment was investigated experimentally . the optimum coating method and technological parameters was summarized
重点探索了涂覆金刚石纳米涂层的方法、实现金刚石与金属钛的热粘接工艺以及氢等离子体处理的工艺参数，筛选出了在本实验系统中的最佳方法和工艺条件。 - Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range , infrared reflectance and low d . c . resistivity ) to ito films , but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito
Al掺杂的zno薄膜，由于具有与ito ( in _ 2o _ 3中适量掺杂sn )薄膜相比拟的对可见光的高透过率和高电导，又因其在氢等离子体中的高稳定性等优点，已成为替代ito透明导电薄膜的研究热点。 - Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一种新型的直接带隙宽禁带半导体材料,具有六方纤锌矿结构,较高的激子束缚能( 60mev ) ,较低的电子诱生缺陷和阈值电压低等优点,在uv探测器、蓝紫光led和ld等光电子器件领域有巨大的应用潜景。